Tech News 1: Creating sub-1-nm gate lengths for MoS2 transistors

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bob_turner
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Tech News 1: Creating sub-1-nm gate lengths for MoS2 transistors

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A team of researchers working at Tsinghua University in China has created a sub-1-nm gate in a MoS2 transistor. In their paper published in the journal Nature, the group outlines how they created the super tiny gate and explains why they believe it will be difficult for anyone to beat their record.

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