Tech News 1: Creating sub-1-nm gate lengths for MoS2 transistors
Posted: Tue Mar 15, 2022 1:30 am
A team of researchers working at Tsinghua University in China has created a sub-1-nm gate in a MoS2 transistor. In their paper published in the journal Nature, the group outlines how they created the super tiny gate and explains why they believe it will be difficult for anyone to beat their record.
Read more
Read more